 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3680 900 800 7 7(Pulse14) 3.5 120(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=-2A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 2SC3680 Unit A A 19.90.3 4.0 V V MHz pF a b o3.20.1 20.0min 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.45 IB2 (A) -1.5 ton (s) 1max tstg (s) 5max tf (s) 1max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 7 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E ( s a t)( V ) (IC/I B= 5) I C - VBE Temperature Characteristics (Typical) 7 (V C E= 4V) 1A 700m A 6 500mA 1 -55C (Cas 25C (C V B E( sat) e Temp) p) 6 Collector Current I C (A) Collector Current I C (A) mp) 4 300 mA ase Tem 4 Temp (Case ) emp (C 12 5 V C E( sat) 0 0.02 0.05 0.1 0.5 1 -5 0 25 C C as 2 2 5C 0 1 2 3 4 57 0 0 0.2 0.4 0.6 0.8 -55C (C eT 25C IB=100mA 125C (Cas 125C (Case ase Tem 200mA ) e Te ) Temp p) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 DC Cur rent Gain h F E 10 j - a( C/ W) hFE - IC Characteristics (Typical) 5 t on *t stg * t f - I C Characteristics (Typical) t on*t s t g *t f ( s) j-a - t Characteristics 2 12 V C C 250V I C: I B 1: I B2= 2:0.3:-1Const. Transient Thermal Resistance 25C C 5 t s tg 1 -55C Switching T im e 0.5 1 0.5 t on 0.2 0.1 tf 10 5 0.02 0.05 0.1 0.5 1 5 7 0.5 1 5 7 0.1 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 Collector Curren t I C( A) 10 Reverse Bias Safe Operating Area 20 120 P c - T a Derating s M aximum Power Dissipa ti on P C( W) m 1m 10 s 0 s 10 5 Collector Curren t I C( A) 100 W ith In fin 1 0.5 1 0.5 ite he at si nk 50 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 0.01 2 5 10 50 100 500 1000 0.01 50 100 500 1000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 69 |
Price & Availability of 2SC3680
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |